报告人：Prof. Gilson Inacio Wirth
报告题目：Charge Trapping Phenomena in MOSFETS: From Noise to Bias Temperature Instability
报告时间：14: 00 PM, April 27th (Saturday)
报告地点：Red Building Room 217
摘要: Charge trapping phenomena is known to be a major reliability concern in modern MOS devices, playing a significant role in aging through Bias Temperature Instability (BTI) and dominating low-frequency noise behavior. An electrical level modeling and simulation approach, valid at DC, AC and transient operation conditions is presented. Detailed statistical analysis is provided, aiming at proper modeling of BTI and noise variability, as well as to facilitate the understanding of physical mechanisms behind BTI and noise that are difficult to obtain otherwise. Case studies relevant for practical applications and understanding of the basic mechanisms are presented and critically discussed.
个人简介: Prof. Gilson Inacio Wirth received the B.S.E.E and M.Sc. degrees from the Universidade Federal do Rio Grande do Sul, Brazil, in 1990 and 1994, respectively. In 1999 he received the Dr.-Ing. degree in Electrical Engineering from the University of Dortmund, Dortmund, Germany. He is currently a professor at the Electrical Engineering Department at the Universidade Federal do Rio Grande do Sul - UFRGS (since January 2007), where he was the head of graduate and undergraduate courses. From July 2002 to December 2006 he was professor and head of the Computer Engineering Department, Universidade Estadual do Rio Grande do Sul (UERGS). His research work is focuses on reliability and yield of MOS devices and circuits, including low-frequency noise, bias temperature instability (BTI), radiation effects, and design techniques to improve yield and reliability. He has stablished successful collaborative work with different companies and research groups in Europe, North and South America. He is currently a Distinguished Lecturer of the IEEE Electron Devices Society. He was a Distinguished Lecturer of the IEEE Circuits and Systems Society (term 2010 to 2011).
